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| Transistor 2SD2598 0.15 Silicon NPN epitaxial planer type darlington For low-frequency amplification Unit: mm 6.90.1 0.7 4.0 1.05 2.50.1 0.05 (1.45) 0.8 0.5 4.50.1 0.45-0.05 2.50.1 q q q Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE = 4000 to 20000. A shunt resistor is omitted from the driver. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.45-0.05 +0.1 +0.1 2.50.5 1 2 2.50.5 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25C) Ratings 60 50 5 750 500 1 150 -55 ~ +150 1cm2 Unit V V V mA mA W C C Symbol VCBO VCEO VEBO ICP IC PC*1 Tj Tstg Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package 1.20.1 0.65 max. 0.45+0.1 - 0.05 (HW type) Internal Connection C B Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency *1h FE (Ta=25C) Symbol ICBO IEBO VCBO VCEO VEBO hFE *1 E Conditions VCB = 25V, IE = 0 VEB = 4V, IC = 0 IC = 100A, IE = 0 IC = 1mA, IB = 0 IE = 100A, IC = 0 VCE = 10V, IC = 500mA*2 0.5mA*2 IC = 500mA, IB = 0.5mA*2 IC = 500mA, IB = VCB = 10V, IE = -50mA, f = 200MHz min typ max 100 100 60 50 5 4000 20000 2.5 3.0 200 *2 14.50.5 s Features 0.65 max. 1.0 1.0 0.2 Unit nA nA V V V VCE(sat) VBE(sat) fT V V MHz Rank classification Q R 4000 ~ 10000 8000 ~ 20000 Pulse measurement Rank hFE 1 Transistor PC -- Ta 2.0 900 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25C 750 IB=150A 125A 100A 75A 2SD2598 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 75C 0.3 0.1 0.03 0.01 0.01 0.03 VCE(sat) -- IC IC/IB=1000 Collector power dissipation PC (W) Collector current IC (mA) 1.6 600 50A 1.2 25C Ta=-25C 450 0.8 300 0.4 150 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (mA) VBE(sat) -- IC 100 hFE -- IC 105 Cob -- VCB Collector output capacitance Cob (pF) VCE=10V 9.0 f=1MHz IE=0 Ta=25C Base to emitter saturation voltage VBE(sat) (V) IC/IB=1000 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 25C Ta=-25C 75C Forward current transfer ratio hFE Ta=75C 104 25C -25C 103 7.5 6.0 4.5 102 3..0 10 1.5 0.1 0.3 1 3 10 1 0.01 0.03 0 0.1 0.3 1 3 10 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) 2 |
Price & Availability of 2SD2598
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